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利用MOS C(t)特性系统地研究了强电场对硅耗尽层少子产生的影响.以Ieda等关于库仑中心电子发射率与电场强度的理论关系为基础,提出了一种对实验结果进行拟合的模型.该模型不仅满意地拟合了本工作的实验,而且合理地阐明了迄今文献中已发表的各种形式的非线性Zerbst实验曲线.结论是,产生率的强电场增强是硅中一个普遍效应,不论是对于高缺陷密度样品还是完整晶体样品,这一效应都是存在的.与深耗尽高频C(V)曲线的转折相对应,观察到了等效产生速度的跳变(突然增大).这一现象可用栅下高浓度区价带电子向耗尽区的隧道注入加以说明.
The influence of strong electric field on the depletion layer of silicon is studied systematically by using MOS C (t) characteristics.On the basis of the theoretical relationship between electron emissivity and electric field intensity of Coulomb center by Ieda et al, a new method to simulate the experimental results The model not only satisfactorily fitted the experimental work but also rationally clarified the various forms of nonlinear Zerbst experimental curves published to date in the literature.It is concluded that the strong electric field enhancement of the generation rate is in the silicon A common effect, both for high defect density samples and for intact crystal samples, is that the transition to equivalent generation speed is observed, corresponding to the turning-off of the high depletion C (V) curve Suddenly increases.) This phenomenon can be demonstrated by the tunneling of the heavily valence band electrons to the depletion region under the gate.