I线光致抗蚀剂可以同时实用电子束和光学系统曝光 ,在 50kV加速电压下 ,其曝光剂量为 50～ 1 0 0 μC/cm2 ,曝光后在 0 7%NaOH溶液内显影 1分钟。其灵敏度比PMMA快 5倍 ,分辨率为 0 5μm。采用两种方法制备CaAsPHEMT :一种用I线光致抗蚀剂 ,对源、漏及栅全部都采用电子束曝光 ,制备了 0 5μm栅长的GaAsPHEMT ;另一种将源、漏及栅分割成两部分 ,其中精细部分由电子束曝光 ,其余部分由光学系统曝光 ,用这种方法制备了 0 2 5μm栅长的GaAsPHEMT。 The I-line photoresist can be simultaneously exposed by electron beam and optical system. The exposure dose is 50 ~ 100 μC / cm2 at 50 kV acceleration voltage, and developed for 1 minute in 0 7% NaOH solution after exposure. Its sensitivity is 5 times faster than PMMA with a resolution of 0 5μm. CaAsPHEMT was prepared in two ways: one was a GaAsPHEMT with a gate length of 0 5 [mu] m fabricated using an I-line photoresist using electron beam lithography for all of the source, drain, and gate; and another method of source, drain, In two parts, the fine part is exposed by the electron beam and the rest is exposed by the optical system. In this way, GaAsPHEMT with a gate length of 0 2 5 μm is prepared.