建立了环栅结构的CMOS/SOI器件的SPICE模型,可以对抗辐照设计中环栅结构的CMOS/SOI器件计算其等效宽长比,将环栅器件转换为等效宽度和长度的条栅器件;以及对体接触电阻等其他受影响的SPICE模型参数做出调整,使其电学特性模拟达到最准确精度。模拟数据和试验数据具有很好的一致性,证明所建立的模型具有较高的精度。 The SPICE model of CMOS / SOI devices with ring-gate structure is established to calculate the equivalent width-to-length ratio of CMOS / SOI devices with ring-gate structure in the irradiation design and convert the ring-gate devices into gate devices of equivalent width and length ; And other affected SPICE model parameters such as body contact resistance to make adjustments to make the simulation of electrical characteristics to achieve the most accurate accuracy. The simulation data and test data have good consistency, which proves that the established model has higher accuracy.