论文部分内容阅读
市售单晶硅通常都掺有一定数量的浅施主或浅受主杂质。由于这些杂质在禁带中引入的能级距带边很近(0.045eV),在常温下这些能级上的电子(或空穴)都已电离成为自由载流子。因此这种单晶硅的电阻率随温度的变化不大。但若在这种单晶硅中再掺入一定数量的
Commercially available monocrystalline silicon is usually doped with a certain amount of shallow donor or shallow acceptor impurity. Since the energy levels introduced by these impurities in the forbidden band are very close to the band edge (0.045 eV), the electrons (or holes) at these energy levels have ionized into free charge carriers at room temperature. Therefore, this single-crystal silicon resistivity with little change in temperature. However, if such a single crystal is spiked with a certain amount of