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本文描述了一种新的阶梯状栅GaAs MESFET结构,与常规凹槽栅结构相比,它的漏电导很低,为了降低漏电导,用二维器件模拟使得与栅结构有关的器件参量最佳化。根据这些最佳化的器件参量制造的器件显示出很低的漏电导。降低了漏电导就可以改进高频GaAs模拟集成电路的最大可用增益。
This article describes a new ladder-like GaAs MESFET structure, which has a low leakage conductance compared to the conventional trench-gate structure. To reduce the leakage conductance, a two-dimensional device simulation is used to optimize the device parameters associated with the gate structure The Devices fabricated from these optimized device parameters exhibit low leakage conductance. Lowering the leakage conductance can improve the maximum gain available for high frequency GaAs analog integrated circuits.