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通过光学浮区法生长了不同浓度的β-(Al,Ga)_2O_3混晶。当Al~(3+)掺杂浓度达到0.26的时候,晶体生长出现开裂现象。进行X射线衍射分析,结果表明所得β-(Al,Ga)_2O_3混晶保持了β-Ga_2O_3的晶体结构,晶体没有出现其他杂质相,并且随着Al~(3+)浓度的增加,晶格常数a、b、c减小,β角增大;核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位,两者的比例约为1:3。通过测试β-(Al,Ga)_2O_3混晶的透过光谱,得出β-(Al,Ga)_2O_3混晶的禁带调节范围为4.72~5.32 eV,扩大了β-Ga_2O_3晶体在更短波段的光电子探测器方面的应用。
The mixed crystals of β - (Al, Ga) _2O_3 with different concentrations were grown by optical floatation method. When Al ~ (3 +) doping concentration reaches 0.26, the crystal growth appears cracking phenomenon. The results show that the crystal structure of β-Ga_2O_3 remains unchanged and the other impurity phases do not appear in the mixed crystals of β-GaAl_2O_3. With the increase of Al 3+ concentration, the crystal lattice The constants a, b and c decrease and the β angle increases. The nuclear magnetic resonance spectrum shows that Al does enter the lattice position of Ga and replaces the four-coordinated and six-coordinated lattice sites of Ga at a ratio of about 1: 3 . By measuring the transmission spectrum of the mixed crystal of β - (Al, Ga) _2O_3, the band gap of the mixed crystal of β - (Al, Ga) _2O_3 is 4.72-5.32 eV, which enlarges the band gap of β - Ga_2O_3 crystal in the shorter wavelength band Of the photoelectron detector applications.