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随着新一代便携式电子信息产品市场的上扬,世界半导体厂家将围绕具有高附加值的快闪存储器市场展开激烈的竞争。用于电池贮藏的 NOR 型快闪存储器的生产大公司都正在0.13μm工艺技术、66MHz高速度动作的水平上一比高低。另外用于数据贮藏的 NAND 生产大公司正在1 Gb级的大容量产品中努力增强自身的市场竞争力。NOR 和 NAND 两者不只是分庭抗礼,也形成了相互渗透之势。最近,以韩国三星为首的以及美国超微及 HYNIX 等公司相继渗入到了原由英特尔及 AMD 共同控制着的 NOR 型快闪存储器市场中来了。其中三星紧紧盯住1 MT2000终
With the new generation of portable electronic information products market rising, the world’s semiconductor manufacturers will focus on the high value-added flash memory market fierce competition. NOR flash memory for battery storage companies are manufacturing large 0.13μm technology, 66MHz high-speed action on the level of a high and low. In addition, NAND production companies for data storage are striving to enhance their market competitiveness in the 1Gb-class high-capacity products. Both NOR and NAND are not just rivals but also form a mutual infiltration. Recently, companies led by South Korea’s Samsung and companies such as AMD and HYNIX have infiltrated NOR flash memory market, which was jointly controlled by Intel and AMD. One of Samsung firmly pegged to 1 MT2000 final