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从理论上分析了强耦合外腔半导体激光器的稳定性。在外腔半导体激光器速率方程分析中引人了强反偏因子近似，通过增益速率－频率平面中的特性分析得到如下结论：对于给定参数的外腔半导体激光器，存在有一个技术不能超越的稳定性的理论极限条件。强反馈和短外腔长度有利于提高外腔半导体激器的稳定性．
The stability of a strongly coupled external cavity semiconductor laser is theoretically analyzed. Introducing a strong inverse approximation factor in the analysis of the rate equations for external cavity semiconductor lasers, the following conclusion is reached from the analysis of the characteristics in the gain-frequency-frequency plane: For a given parameter of an external cavity semiconductor laser, there is an unsurpassed stability The theoretical limit conditions. Strong feedback and short external cavity length help to improve the stability of the external cavity semiconductor exciter.