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提出一种在微波与毫米波段快速、精确地建立ＨＥＭＴ器件等效电路的新方法，并对ＨＥＭＴ器件的噪声模型及参数的提取方式进行了研究．给出了等效电路模型（２～６０ＧＨｚ）和噪声模型（２～２６ＧＨｚ）的数值结果．
A new method to establish the equivalent circuit of HEMT device in microwave and millimeter wavebands quickly and accurately is proposed. The noise model of HEMT device and the extraction method of parameters are also studied. The numerical results of equivalent circuit model (2 ~ 60GHz) and noise model (2 ~ 26GHz) are given.