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使用TCAD仿真软件对3 300 V沟槽栅IGBT的静态特性进行了仿真设计。重点研究了衬底材料参数、沟槽结构对器件击穿电压、电场峰值等参数的影响。仿真结果表明,随衬底电阻率增加,击穿电压增加,饱和电压和拐角位置电场峰值无明显变化;随衬底厚度增加,击穿电压增加,饱和电压增加,拐角位置电场峰值降低;随沟槽宽度增加,饱和电压降低,击穿电压和拐角位置电场峰值无明显变化;随沟槽深度增加,饱和电压降低,击穿电压无明显变化,拐角位置电场峰值增加;随沟槽拐角位置半径增加,击穿电压和饱和电压无明显变化,但拐角位置电场峰值减小。选择合适的衬底材料对仿真结果进行实验验证,实验结果与仿真结果相符,制备的IGBT芯片击穿电压为4 128 V,饱和电压约为2.18 V。
The static characteristics of 3 300 V trench gate IGBTs were simulated using TCAD simulation software. The effects of substrate material parameters and trench structure on breakdown voltage and peak value of electric field were studied emphatically. The simulation results show that with the increase of the substrate resistivity, the breakdown voltage increases and the peak values of the saturation voltage and the corner electric field have no obvious changes. With the increase of the substrate thickness, the breakdown voltage increases and the saturation voltage increases, while the peak electric field at the corner decreases. As the trench depth increases, the saturation voltage decreases, the breakdown voltage does not change significantly, and the peak value of the electric field at the corner increases; as the radius of the corner position of the trench increases , Breakdown voltage and saturation voltage did not change significantly, but the corner position of the electric field decreases. The appropriate substrate materials are selected to verify the simulation results. The experimental results are consistent with the simulation results. The breakdown voltage of the prepared IGBT chip is 4 128 V and the saturation voltage is about 2.18 V.