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采用MOCVD脉冲供源方法制备了76.2 mm(3英寸)高质量薄势垒层的InAlGaN/GaN异质结材料。通过对样品表面形貌及电学特性等测试,研究了进入反应腔MO源的不同脉冲组合对InAlGaN材料生长的影响,并分析了相关机理。其中等效为InAlN/AlGaN类超晶格结构的势垒层外延方法,基于原子层间近晶格匹配和超晶格的原子层调制作用,有效改善了势垒层材料质量和表面形貌,提升了异质结料的电学特性,室温下电子迁移率达到1 620cm~2/(V·s),方块电阻217.2Ω/。
The InAlGaN / GaN heterostructure material with 76.2 mm (3 inches) high quality thin barrier layer was prepared by MOCVD pulse source method. The effects of different pulse combinations entering the MO source on the growth of InAlGaN materials were investigated by testing the surface morphology and electrical properties of the samples. The relevant mechanisms were also analyzed. Among them, the barrier layer epitaxy method is equivalent to the InAlN / AlGaN superlattice structure. Based on the atomic layer modulation between the atomic layer near-lattice matching and the superlattice, the barrier layer material quality and the surface topography are effectively improved, The electrical properties of the heterojunction material are improved. The electron mobility reaches 1 620 cm -2 / (V · s) at room temperature, and the sheet resistance is 217.2 Ω /.