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本文叙述了GaAs 功率场效应晶体管(FET)X 波段测量的最新结果。这类器件用简单的平面工艺制造,已有25个以上的片子获得9千兆赫下功率增益为4分贝时输出功率至少1瓦的结果。这些片子的载流子浓度在5～15×10~(16)厘米~(-3)范围。迄今,4分贝功率增益下的最大输出功率已观察到在11千兆赫下为1.0瓦,在8千兆赫下为3.6瓦。器件在8千兆赫下的功率附加效率可达46%。本文扼要地叙述了制造工艺,并对影响大输出功率的诸因素进行了讨论。这些因素是8×10~(16)厘米~(-3)左右的外延层载流子浓度、良好的器件热沉和低的寄生电阻。还讨论了所观察到的微波性能与总栅宽、栅长、夹断电压、外延掺杂浓度等因素的关系。
This article describes the latest results of X-band measurements of GaAs power field-effect transistors (FETs). Manufactured using a simple planar process, more than 25 of these films have resulted in at least 1 watt output power at 4-dB power gain at 9-GHz. The carrier concentration of these films is in the range of 5-15x10 ~ (16) cm ~ (-3). To date, the maximum output power at 4 dB power gain has been observed at 1.0 W at 11 GHz and 3.6 W at 8 GHz. The device achieves a power added efficiency of 46% at 8 GHz. This article briefly describes the manufacturing process and discusses the factors that affect large output power. These factors are the epitaxial layer carrier concentration of about 8 × 10 ~ (16) cm ~ (-3), good device heat sink and low parasitic resistance. The observed microwave performance is also discussed in relation to factors such as total gate width, gate length, pinch-off voltage, epitaxial doping concentration and the like.