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运用蒙特·卡罗(Monte Carlo)方法研究了微波场效应晶体管源和漏之间的电子动力学。介绍了平均电子速度的空间依赖关系和时间依赖关系。业已表明,在硅中,弛豫时间很短,不影响晶体管的优值。但是,在中心能带结构的极性半导体(例如砷化镓)中,在一个可估计的时间间隔内,相应地在一个与高频场效应晶体管有源区的长度相当的不能忽略的距离上,电子可以具有比它们的饱和值更大的速度。这就有可能提高场效应晶体管的优值。
The electron dynamics between microwave field effect transistor source and drain was studied by Monte Carlo method. The space-dependent and time-dependent relationship of average electronic velocity is introduced. It has been shown that in silicon, the relaxation time is short and does not affect the transistor's merit. However, in a polar bandgap semiconductor such as gallium arsenide, at an appreciable interval of time, correspondingly, at a non-negligible distance corresponding to the length of the high frequency field effect transistor active region, , The electrons may have a greater speed than their saturation value. This makes it possible to improve the merit of the field effect transistor.