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在室温,不同氧分压条件下,采用Zn靶直流反应溅射在石英衬底上制备了具有纤锌矿结构(002)择优取向的ZnO薄膜。薄膜的生长速率随氧分压的增大而减小,在20%-30%之间存在一个拐点,在此点之前,溅射产额减小的速率很快,而在此点之后,溅射产额减小的速率减慢了很多,当氧分压在30%以上时,溅射过程中Zn的氧化在靶表面就已经完成。通过单振子模型分析了薄膜的光学特性,采用X射线衍射的方法对薄膜的晶粒尺寸和应力进行分析。研究结果表明在氧分压20%以上时,薄膜在可见光波段具有较好的光学透明性和很高的电阻率。薄膜的光学折射率、晶面间距和内部应力均随着氧分压的增大而增大。并从薄膜生长机理上给出了理论解释。
ZnO films with wurtzite (002) preferential orientation were prepared on quartz substrates by Zn target direct current reactive sputtering at room temperature and different partial pressure of oxygen. The growth rate of the film decreases with increasing partial pressure of oxygen. There is an inflection point between 20% and 30%. Before this point, the sputtering yield decreases rapidly, and after this point, the sputtering rate The rate of decrease in throughput slowed a lot. When the oxygen partial pressure is above 30%, the oxidation of Zn during the sputtering process has been completed at the target surface. The optical properties of the films were analyzed by the unimodal model and the grain size and stress of the films were analyzed by X-ray diffraction. The results show that when the partial pressure of oxygen is above 20%, the film has good optical transparency and high resistivity in the visible light band. The optical refractive index, interplanar spacing and internal stress increase with the increase of oxygen partial pressure. And from the film growth mechanism to give a theoretical explanation.