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本工作用不同的Si~+预注入能量,改变注入损伤分布与离子注入硼杂质分布的相对位置,观察快速热退火中注入损伤对硼异常扩散的影响.结果表明,引起注入硼异常扩散的是点缺陷,而不是硼间隙原子的快扩散.而注入损伤中的点缺陷和簇团分解释放的点缺陷是驱动硼异常扩散的因素之一.如果注入损伤形成了扩展缺陷,那么扩展缺陷重构和分解将发射点缺陷,这是驱动硼异常扩散的另一个因素.
In this work, different Si ~ + pre-implantation energies were used to change the relative positions of the implantation damage distribution and the impurity distribution of ion implantation, and the effect of implantation damage on the abnormal boron diffusion during rapid thermal annealing was observed. Point defects, rather than the rapid diffusion of boron interstitial atoms, while point defects in injection damage and point defects caused by cluster decomposition are one of the factors driving the abnormal diffusion of boron.If the injection damage forms an expansion defect, then the extended defect reconstruction And decomposition will launch point defects, which is another factor driving the abnormal diffusion of boron.