据报导,雷锡昂公司用垂直各向异性腐蚀法(V-ATE:Vertical anisotropic etch)制成双极晶体管结构的、密度与 MOS 器件相同的随机存取存储器。存取时间少于50毫微秒。在110×110密耳片上可制成1024位的双极随机存取存储器。此办法是用空气隔离器件代替标准的扩散隔离或氧化隔离。因为,晶体管有源区和 P~+ It has been reported that Raytheon made a bipolar transistor structure with the same density of MOS devices as its V-ATE (vertical anisotropic etch). Access time is less than 50 nanoseconds. A bipolar random access memory of 1024 bits can be made on a 110 x 110 mil chip. This approach uses air isolation devices instead of standard diffusion or oxide isolation. Because, transistor active area and P ~ +