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本文论述了射频磁控溅射制备ITO薄膜温度和氧分压对薄膜光电性能的影响,利用四探针方法、红外光谱研究了不同工艺对面电阻、载流子浓度等电性能的影响。实验结果表明:在功率100W,溅射时间60min条件下,氧分压保持Po=0Pa时薄膜面电阻随温度升高而降低,载流子浓度随温度升高而增加;在温度100℃时面电阻随氧分压增加而增加,载流子浓度随氧分压增加而减小,并且可以看出氧分压的影响更为明显。
In this paper, the influence of RF magnetron sputtering temperature and partial pressure of oxygen on the photoelectric properties of thin films was investigated. The effects of different processes on electrical properties such as surface resistance and carrier concentration were studied by four-probe method and infrared spectroscopy. The experimental results show that at a power of 100W and a sputtering time of 60min, the sheet resistance decreases with increasing temperature when the oxygen partial pressure is maintained at 0Pa. The carrier concentration increases with increasing temperature. When the temperature is 100 ℃ The resistance increases with the increase of partial pressure of oxygen, the carrier concentration decreases with the increase of partial pressure of oxygen, and it can be seen that the influence of partial pressure of oxygen is more obvious.