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热释电非制冷红外探测器由于具有可靠性高、成本低、无需制冷等优点,使其得到了广泛应用。在热释电探测器中,热绝缘结构具有红外热转换、机械支撑和热隔离等作用。良好的热绝缘结构是减小探测器热导率和改善其性能的关键。采用半导体光刻技术和牺牲层技术,在硅基底上制备了由牺牲层和Si3N4薄膜组成的微桥结构,该方法使探测器的微桥结构的制备与半导体工艺相兼容,并通过优化工艺参数,提高了微桥结构的机械强度,减小了热导,解决了制备热绝缘结构的关键技术,制备了像元中心距为50μm、填充因子为40%～60%、耐受温度≥500℃的320×240微桥列阵,该结构为制备高性能非制冷焦平面探测器奠定了基础。
Pyroelectric uncooled infrared detectors have been widely used due to their advantages of high reliability, low cost and no refrigeration. In the pyroelectric detector, the thermal insulation structure has the function of infrared thermal conversion, mechanical support and thermal isolation. A good thermal insulation structure is the key to reducing the thermal conductivity of the detector and improving its performance. A micro-bridge structure consisting of a sacrificial layer and a Si3N4 thin film is prepared on a silicon substrate by using semiconductor lithography and sacrificial layer technology. The method makes the preparation of the micro-bridge structure of the detector compatible with the semiconductor process and optimizes the process parameters , The mechanical strength of the micro-bridge structure is improved, the thermal conductivity is reduced, and the key technology for preparing the thermal insulation structure is solved. The center distance of the pixel is 50 μm, the filling factor is 40% -60%, the withstand temperature is ≥500 ° C. Of the 320 × 240 micro-bridge array, the structure for the preparation of high-performance uncooled focal plane detector laid the foundation.