本文在满足均匀掺杂的前提下,将微分C-V法杂质浓度公式进行适当的数学运算,建立起新的C-V杂质浓度公式,提出C_0-V_(1/2)C_0测杂技术.本测杂技术对集成电路n/p型硅外延片及n/n~+高阻外延片进行杂质浓度测试是很方便的,它不仅方法简单、测量速度快,而且也克服了微分C-V法作斜率引入的人为误差,对于缺少x-y函数记录仪的单位也是值得推广的一种好方法. In this paper, under the precondition of satisfying uniform doping, the formula of impurity concentration in differential CV method is put into proper mathematical operation, a new CV impurity concentration formula is established, and the C_0-V_ (1/2) C_0 hybrid measurement technique is proposed. It is very convenient to test the impurity concentration of integrated circuit n / p type silicon epitaxial wafers and n / n ~ + high resistance epitaxial wafers. It not only has the advantages of simple method and fast measuring speed, but also overcomes the problem of differential Errors, a good way to promote the lack of xy function recorder unit.