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三菱公司的光电集成电路日本三菱电子公司已生产了一种原型光电集成电路,它由叠加在镓砷化物基片上的多层铟镓砷化物和铟磷光体组成。集成电路片的寸尺为0.6×0.8mm,使一块直径为76.2mm GaAs片可制成5000个这样的电路。每个集成电路包含一只把光信号转换为电信号的光电二极管和一只放大电信号的场效应晶体管。据该公司报导:当622Mb/s的光信号加到该集成电路时,并且在光信号功率为1.6mW时,光电转换的比特误码率为十亿分之一。一种新的雷崩光电二极管
Mitsubishi’s optoelectronic integrated circuits Mitsubishi Electric Corporation of Japan has produced a prototype optoelectronic integrated circuit, which consists of a multilayer indium gallium arsenide and indium phosphors stacked on a gallium arsenide substrate. The scale of the IC chip is 0.6 × 0.8 mm, so that a piece of GaAs chip with a diameter of 76.2 mm can be made into 5000 such circuits. Each integrated circuit includes a photodiode that converts an optical signal into an electrical signal and a field-effect transistor that amplifies the electrical signal. According to the company, when a 622 Mb / s optical signal is applied to the integrated circuit and the optical signal power is 1.6 mW, the bit error rate of photoelectric conversion is one billionth of a billion. A New Photodegradation Photodiode