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介绍ＧｅＳｉ／Ｓｉ应变新材料探测器的制作方法，它不仅与Ｓｉ微电子工艺相兼容，而且还可调节Ｇｅ含量使其禁带宽度满足现代光纤通信器件的要求。
GeSi / Si strain new material detector production methods, it is not only compatible with Si microelectronics process, but also can adjust the Ge content of its band gap to meet the requirements of modern optical fiber communication devices.