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提出了一种新型的Schottky体接触结构 ,能够有效抑制部分耗尽SOInMOSFET的浮体效应 .这种结构可以通过在源区形成一个浅的n+ p结和二次侧墙 ,然后生长厚的硅化物以穿透这个浅结的方法来实现 .模拟结果表明这种结构能够成功抑制SOInMOSFET中存在的反常亚阈值斜率和kink效应 ,漏端击穿电压也有显著提高 .这种抑制浮体效应的方法不增加器件面积 ,而且与体硅MOSFET工艺完全兼容 .
A new type of Schottky body contact structure is proposed, which can effectively restrain the floating body effect of the partially depleted SOInMOSFET. This structure can be achieved by forming a shallow n + p junction and a secondary spacer in the source region and then growing thick silicide Through this shallow method to achieve.Modeling results show that this structure can successfully inhibit the SOInMOSFET exist in the abnormal subthreshold slope and kink effect, drain voltage breakdown also increased significantly.This floating body effect method does not increase the device Area, but also fully compatible with bulk silicon MOSFET process.