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用液封坩埚下降（ＬＥ－ＶＢ）法沿〈１００〉晶向成功地生长了非掺杂ＩｎＰ单晶．ＬＥ－ＶＢ晶体的４．２Ｋ光致发光谱包含束缚于中性浅受主上的激子发光、与Ｚｎ受主相关的施主－受主（ＤＡ）对发光及其声子伴线、以及与本征缺陷等有关的深能级发光三部分．通过与液封直拉（ＬＥＣ）生长的籽晶的光致发光谱比较表明，在ＬＥ－ＶＢ晶体中，束缚于中性浅受主上的激子发光与籽晶中的相差不大；ＤＡ对发光的晶格弛豫比籽晶中的小；与本征缺陷等有关的深能级发光强度比籽晶中的弱．晶体的室温光致发光谱仅包含带—带发光，其发光强度形貌测试结果表明，ＬＥ－ＶＢ晶体的带—带发光强度比ＬＥＣ籽晶的强．用Ｈｕｂｅｒ法对晶片腐蚀的结果表明，在ＬＥ－ＢＶ晶体中，位错密度仅为ＬＥＣ籽晶中的三分之一．分析认为，在ＬＥ－ＶＢ晶体中，本征缺陷和位错等浓度较低，可能是其带—带发光强度比在ＬＥＣ籽晶中强的物理起因．
Non-doped InP single crystals were successfully grown along the <100> orientation with the liquid-sealed crucible drop (LE-VB) method. The 4.2K photoluminescence spectrum of LE-VB crystals includes exciton luminescence bound to a neutral acceptor, the donor-acceptor (DA) pair luminescence associated with the Zn acceptor and its phonon counterparts, Inherent defects related to the deep level of light-emitting three parts. The comparison of the photoluminescence spectra of seeds grown with liquid-crystalline Czochralski (LEC) showed that in LE-VB crystals, the exciton luminescence bound to the neutral acceptor has little difference from that in the seeds; DA The luminescence lattice relaxation is smaller than in the seed; the deep level luminescence intensity associated with intrinsic defects and the like is weaker than in the seed. The room-temperature photoluminescence spectrum of the crystal contains only band-band luminescence. The results of its luminescence intensity topography show that the band-band luminescence intensity of the LE-VB crystal is stronger than that of the LEC seed crystal. The results of the Huber method for wafer erosion show that the dislocation density in LE-BV crystals is only one-third of the LEC seed. It is believed that the lower concentration of intrinsic defects and dislocations in LE-VB crystals may be a strong physical cause of the band-to-band luminescence intensity ratio in LEC seeds.