本文用 Monte Carlo法研究了 MOSFET的几何尺寸、工艺参数在实际范围内波动时,阈值电压V_T的离散及其对氧化膜厚度t_(ox)、表面态电荷密度Q_(ss)、衬底杂质浓度N_A及沟道长度L等六个变量的敏感度.结果表明:V_T是正态分布;随着沟道变短进入短沟道区域,V_T对L的敏感度急剧上升,对t_(ox)、Q_(ss)及N_A的敏感度下降. In this paper, the Monte Carlo method is used to study the geometrical dimensions of the MOSFET. When the process parameters fluctuate within the actual range, the threshold voltage V_T dispersion and its effect on the oxide film thickness t ox, surface charge density Q ss, N_A and channel length L. The results show that: V_T is a normal distribution; as the channel becomes shorter into the short channel region, the sensitivity of V_T to L increases sharply, and the sensitivity to t ox, The sensitivity of Q_ (ss) and N_A decreased.