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中子嬗变掺杂直拉硅的内吸除机理与直拉硅不同,它是辐照缺陷与硅中氧杂质相互作用的结果。在1100℃、热退火4h即可完成中子嬗变掺杂直拉硅的内吸除处理。
The mechanism of internal absorption of neutron-transmutated Czochralski silicon is different from that of Czochralski silicon. It is the result of the interaction between irradiation defects and oxygen impurities in silicon. At 1100 ℃, thermal anneal 4h to complete the neutron transmutation of silicon Czochralski processing.