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The influence of temperature on the intensity of light emitted by as well as the carrier life time of a standard AlGaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay(OCVD) technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.
The influence of temperature on the intensity of light emitted by as well as the carrier life time of a standard AlGaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay (OCVD) technique has Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.