Single crystal of Lu2Si2O7:Pr was grown by Czochralski method. Transmittance, photoluminescence excitation (PLE) and photo-luminescence (PL) spectra, X-ray excited luminescence (XEL) and fluorescence decay time spectra of the sample were measured and discussed to investigate its optical characteristics. The crystal structure of the as grown Lu2Si2O7:Pr was confirmed to be C2/m. There was a broad absorption peaking at 245 nm in the region from 200-260 nm. The PL spectrum was dominated by fast 3PJ→3HJ band peaking at 524 nm. The XEL spectrum was dominated by the fast 5d14f1→4f2 emission peaking at 265 nm. The 2D (temperature-intensity) and 3D (temperature-wavelength-intensity) thermally stimulated luminescence (TSL) spectra were measured. The Pr3+ ion was found to be the recombination center during the TSL process. Three obvious traps were detected in LPS:Pr single crystal with energy depth at 1.06, 0.78 and 0.67 eV. Single crystal of Lu2Si2O7: Pr was grown by Czochralski method. Transmittance, photoluminescence excitation (PLE) and photo-luminescence (PL) spectra, X-ray excited luminescence (XEL) and fluorescence decay time spectra of the sample were measured and discussed to investigate The optical structure of the as grown Lu2Si2O7: Pr was confirmed to be C2 / m. There was a broad absorption peaking at 245 nm in the region from 200-260 nm. The PL spectrum was dominated by fast 3PJ → 3HJ The XEL spectrum was dominated by the fast 5d14f1 → 4f2 emission peaking at 265 nm. The 2D (temperature-intensity) and 3D (temperature-wavelength-intensity) thermally stimulated luminescence (TSL) spectra were measured. The Pr3 + ion was found to be the recombination center during the TSL process. Three obvious traps were detected in LPS: Pr single crystal with energy depth at 1.06, 0.78 and 0.67 eV.