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A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide(SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.
A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy. Here, we report a graphene / silicon carbide (SiC) -based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A / W with a response frequency of over a megahertz under 325-nm laser irradiation. The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices. These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC, two terminal electrodes, and asymmetric light irradiation on one of the electrodes. Implantantly, the photon energy is larger than the band gap of SiC. This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.