绝缘栅双极晶体管(IGBT)是由功率MOSFET和双极晶体管(BJT)复合而成的一种新型半导体器件,它集两者的优点于一体,具有输入阻抗大、驱动功率小、控制电路简单、开关损耗小、速度快及工作频率高等特点,成为目前最有应用前景的电力半导体器件。在轨道交通、航空航天、新能源、智能电网、智能家电这些朝阳产业中,IGBT作为自动控制和功率变换的核心部件,是必不可少的功率器件“核芯”。电力电子行业里的“CPU” Insulated Gate Bipolar Transistor (IGBT) is a new type of semiconductor device composed of a power MOSFET and a bipolar transistor (BJT). It integrates the advantages of both, has the advantages of large input impedance, small driving power and simple control circuit , Small switching loss, high speed and high operating frequency, becoming the most promising power semiconductor devices. In the sun industry such as rail transit, aerospace, new energy, smart grid, and smart home appliances, IGBTs are indispensable power devices “core ” as the core components of automatic control and power conversion. Power electronics industry in the “CPU”