论文部分内容阅读
利用变温霍尔和电流 -电压特性 (I- V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量 .在非掺退火后的半导体磷化铟样品中可以测到缺陷带电导 ,这与自由电子浓度较低、有一定补偿度的原生非掺磷化铟的情况类似 .非掺 SI- In P表现出不同于原生掺铁的 SI- In P的 I- V特性 ,在一直到击穿为止的外加电场范围内呈欧姆特性 ,而掺铁 SI- In P的 I- V具有与陷阱填充有关非线性特征 .根据空间电荷限制电流的理论 ,这种现象可以解释为非掺 SI- In P中没有未被电子占据的空的深能级缺陷
The semiconducting and semi-insulating annealed indium-phosphide-free indium materials were measured by a variable temperature Hall and a current-voltage characteristic (I-V) method, respectively. The defect is electrically conductive, similar to the case of native undoped indium phosphide with a lower free electron concentration and a certain degree of compensation.The non-doped SI-In P exhibits I-V characteristics that are different from those of the primary doped iron , Ohmic in the range of applied electric field up to breakdown, and I-V in iron-doped SI-In P has nonlinear characteristics related to trap filling.According to the theory of space charge limited current, this phenomenon can be interpreted as There are no empty deep level defects in the undoped SI-In P that are not occupied by electrons