直接耦合场效应逻辑（ＤＣＦＬ）具有简单的结构、良好的速度／功耗性能，是ＧａＡｓＦＥＴＬＳＩ电路中一种重要的逻辑形式。传统Ｅ／Ｄ型ＤＣＦＬ电路具有较低的成品率和较差的温度特性，本文研究了改进的Ｅ／Ｅ型ＤＣＦＬ电路。对Ｅ／Ｄ、Ｅ／Ｅ型ＤＣＦＬ电路的直流、瞬态及温度特性进行了分析、模拟和比较，Ｅ／Ｅ逻辑具有良好的高温性能。经优化设计，最后制作出单门延迟约１００ｐｓ、单门功耗约１ｍＷ的Ｅ／Ｄ和Ｅ／Ｅ型ＤＣＦＬ电路，且Ｅ／Ｅ型电路较Ｅ／Ｄ型电路具有更高的成品率。 Direct coupled field effect logic (DCFL) has a simple structure, good speed / power performance, is an important logic form of GaAsFETLSI circuit. Traditional E / D DCFL circuit has a lower yield and poor temperature characteristics, this paper studies the improved E / E DCFL circuit. The DC, transient and temperature characteristics of E / D and E / E DCFL circuits were analyzed, simulated and compared. The E / E logic has good high temperature performance. Finally, the E / D and E / E DCFL circuits with single-gate delay of about 100 ps and single-gate power consumption of about 1 mW are fabricated. The E / E circuit has higher yield than the E / D circuit.