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自81年8月份以来,离子注入工艺围绕着GaAs材料开展了在缓冲层上和半绝缘衬底上注入Si和S杂质,以及注入后用SiO_2包封退火和夹片方式退火等方面的实验,目前已经在单栅和双栅FET器件上取得了初步结果.用能量为200keV、剂量为4×10~(12)cm~(-2)的单电荷Si离子,注入缓冲层制作FET的有源层.注入后用SiO_2包封,在825℃的氢气炉中退火30分钟.制出的双栅FET器件,在频率2GHz下,噪声系数为0.9dB,相关增益为14.5dB.另外,为了满足有些器件注入深度的要求,在200keV
Since August 81, ion implantation has been carried out around GaAs material on the buffer layer and semi-insulating substrate implantation of Si and S impurities, as well as after injection with SiO 2 annealing and wafer annealing and other aspects of the experiment, Preliminary results have been achieved on single-gate and dual-gate FET devices.It was fabricated by implanting a buffer layer with single-charged Si ions at an energy of 200 keV and a dose of 4 × 10 ~ (12) cm ~ (-2) Layer. After injection, encapsulated in SiO 2 and annealed in a hydrogen furnace at 825 ° C. for 30 minutes, a dual-gate FET device with a noise figure of 0.9 dB and a relative gain of 14.5 dB at a frequency of 2 GHz was used. In addition, Device implant depth requirements at 200keV