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利用溶胶 凝胶法在SiO2 Si衬底上沉积高取向的V2 O5薄膜 ,在压强低于 2Pa ,温度高于 40 0℃的条件下 ,对V2 O5薄膜进行真空烘烤 ,获得了电阻率变化 3个数量级以上、弛豫宽度为 6 2℃的VO2 多晶薄膜 .以X射线衍射(XRD)、扫描电子显微镜 (SEM)图和电阻率转换特性等实验结果为依据 ,详细分析了溶胶 凝胶薄膜在真空烘烤时从V2 O5向VO2 的转化 ,它经历了从VnO2n +1 (n =2 ,3,4,6 )到VO2 的过程 .实验证明 ,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶 凝胶V2 O5结构向VO2 结构成功转换的关键
Highly oriented V2 O5 thin films were deposited on the SiO2 Si substrate by sol-gel method. The V2 O5 thin films were vacuum-baked at a pressure lower than 2 Pa and a temperature higher than 40 0 C, and the change in resistivity 3 VO2 polycrystalline thin films with order of magnitude or more and relaxation width of 62 ℃ were obtained.According to the experimental results of X-ray diffraction (XRD), scanning electron microscopy (SEM) and resistivity conversion, the effects of sol-gel thin film The conversion from V2 O5 to VO2 during vacuum baking, which experienced the process from VnO2n + 1 (n = 2, 3, 4, 6) to VO2, proved that according to the choice of suitable film-forming heat treatment conditions and vacuum baking Roasting conditions are the key to the successful conversion of sol-gel V2 O5 structure to VO2 structure