The turn-on speed of electrostatic discharge(ESD) protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device(DTSCR) can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p–n–p and n–p–n transistors. Using the variation lateral base doping(VLBD) structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure(VLBD_DTSCR) is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD_DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n–p–n and p–n–p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD_DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current. The turn-on speed of electrostatic discharge (ESD) protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device (DTSCR) can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping (VLBD) structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure (VLBD_DTSCR) is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD_DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p-n-p bipolar transistor s to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD_DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current.