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本文对亚微米MOSFET在漏雪崩恒流应力(DAS)条件下热载流子注入引起的退变现象做了实验研究。实验结果表明:在一般的恒流应力条件下,栅氧化层中由空穴注入形成的空穴陷阱电荷对器件特性起主要影响作用。恒流应力过程中,任何附加的电子注入都可使器件退变特性发生明显变化,实验结果还证实,漏雪崩应力期间形成的空穴陷阱电荷可明显降低器件栅氧化层的介质击穿特性。
In this paper, experimental studies on the degeneration induced by hot carrier injection in sub-micron MOSFET under avalanche-avalanche constant-current stress (DAS) have been done. The experimental results show that under normal constant current stress, the hole trap charge formed by hole injection in the gate oxide plays a major role in the device characteristics. During the constant current stress, any additional electron injection can significantly degrade the device degeneration. The experimental results also confirm that the hole trap charge formed during the avalanche stress can significantly reduce the dielectric breakdown of the device gate oxide.