1994年10月,以色列的S.C.D半导体器件公司(Semi-Conductor Devices)组团参加了在北京国际展览中心举办的国际光电技术讨论会(IOPS’94)和国际光电技术展览会(IOPE’94)。在展览会上,该公司展出了代表以色列锑化铟(InSb)和碲镉汞(HgCdTe)红外探测器现状的实物和有关资料,并与我国的红外界人士进行了技术交流。为了使大家了解以色列锑化铟和碲镉汞红外探测器当前的水平,本文对以色列S.C.D公司研制生产的多种型号锑化铟和碲镉汞红外探测器的技术条件和性能参数等有关资料进行了整理,供大家参考。 In October 1994, Israel’s S.C.D. Semi-Conductor Devices Group participated in the International Photovoltaic Technology Symposium (IOPS’94) and International Photovoltaic Technology Exhibition (IOPE’94) at the Beijing International Exhibition Center. At the exhibition, the company exhibited the physical and relevant information on the status quo of the InSb and HgCdTe infrared detectors in Israel and conducted technical exchanges with the people in the infrared in our country. In order to make everyone aware of the current status of Israel’s indium antimonide and HgCdTe detectors, this paper conducts the research on the technical conditions and performance parameters of various types of indium antimonide and HgCdTe detectors developed and manufactured by Israel’s SCD company Finishing, for your reference.