利用红外吸收谱等微观分析对氧化硅和氨化硅薄膜的成分和结构进行了研究．采用高频Ｃ－Ｖ测试和准静态离子电流法测量了氧化硅、氯化硅及其复合膜的界面特性，结果表明ＰＥＣＶＤＳｉＯ２－ＳｉＮ双层结构的复合膜对半导体器件表面有良好的钝化效果． The composition and structure of silicon oxide and silicon nitride films were investigated by microscopic analysis of infrared absorption spectrum. The interface characteristics of silicon oxide, silicon chloride and their composite films were measured by high-frequency C-V test and quasi-static ion current method. The results showed that the composite film with double-layer structure of PECVDSiO2-SiN had a good passivation effect on the surface of semiconductor devices .