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Graphene is a new promising candidate for application in radio-frequency(RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently,much progress has been made in the graphene-based RF field-effect transistors(RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm,respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.
Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors (RF-FETs). The first time the high-performance top-gated RF transistors using a millimeter-scale single graphene domain on a SiO2 / Si substrate through a conventional microfabrication process. A maximum cut- off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.