论文部分内容阅读
用X射线电子谱（XPS）评价了由改进的RCA方法清洗，又经HF处理的洁净（111）硅片在高真空和超高真空中加低热时的表面状态。实验表时，清洗后的硅片表面沾污中的氧（O）比较少而碳（C）相对多一些，同时存在微量的氟（F）。如果清洗工艺操作得当，可望获得较干净的衬底表面。洁净的硅片在8×10-6Pa的真空中存放12h后，表面吸附的C比O增加得更快。给出了在高低真空中硅片加低热前后表面状态的变化情况，并实时检测在超高真空中加低热时表面状态的XPS谱，同时对实验结果给予分析、讨论。
The surface state of clean (111) silicon wafers cleaned by the improved RCA method and treated with HF at low heat in high vacuum and ultra-high vacuum was evaluated by X-ray photoelectron spectroscopy (XPS). In the experimental table, there was a relatively small amount of oxygen (O) in the surface of the silicon wafer after cleaning and a relatively large amount of carbon (C) while a slight amount of fluorine (F) was present. If the cleaning process is properly handled, a cleaner substrate surface is expected. After the cleaned silicon wafer was stored in a vacuum of 8 × 10 -6 Pa for 12 h, the surface adsorbed C increased faster than O. The changes of the surface state before and after the addition of silicon in the high and low vacuum were given. The XPS spectra of the surface state in the ultrahigh vacuum with low heat were detected in real time. The experimental results were also analyzed and discussed.