论文部分内容阅读
采用Sn自熔剂法制备了具有n型传导的VIII型Ba8Ga16 xGexSn30(0 x 1.0)单晶笼合物,并对其结构和热电特性进行研究.研究结果表明:Ge在单晶中的实际含量较少,随着掺杂量的增加样品的晶格常数略有减小,Ge掺杂后样品的载流子浓度较掺杂前低,迁移率增加;所有样品的Seebeck系数均为负值,且绝对值较未掺杂样品低,但Ge掺杂后样品的电导率提高了62%;x=0.5的样品在500 K附近取得最大ZT值1.25.
The n-type conduction type VIII Ba8Ga16 xGexSn30 (0 x 1.0) single crystal cage was prepared by Sn self-flux method and its structure and thermoelectric properties were studied. The results show that the actual content of Ge in the single crystal is The lattice constant of the sample decreases slightly with the increase of doping amount, the carrier concentration of Ge doping sample is lower than before doping and the mobility increases; the Seebeck coefficients of all the samples are negative, and The absolute value was lower than that of the undoped sample, but the conductivity of the sample doped with Ge increased by 62%. The sample with x = 0.5 got the maximum ZT value of 1.25 near 500K.