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论述了从硅熔体中生长 3C- Si C晶体过程中 6 H- Si C晶型控制的一般原理 .采用将硅置于高纯石墨坩埚中使其在高温条件下熔化 ,坩埚内壁石墨自然熔解于硅熔体中形成碳饱和的硅熔体 ,在石墨表面形成厚约 0 .2 m m的Si C薄层 .X射线衍射 (XRD)、X射线光电子能谱 (XPS)、Ram an散射等分析表明所制备样品为 3C- Si C多晶体 .实验结果进一步证明从硅熔体中生长 3C- Si C晶体过程中 ,通过适当调整工艺参数可以抑制 6 H- Si C晶型的形成 .
The general principle of the control of the crystalline form of 6 H-Si C during the growth of 3C-Si C crystal from silicon melt is discussed.The silicon is melted in a high-purity graphite crucible at high temperature, and the graphite in the inner wall of the crucible is naturally melted A carbon-saturated silicon melt was formed in the silicon melt to form a thin layer of Si C about 0.2 mm thick on the graphite surface. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) Indicating that the prepared sample is 3C-Si C polycrystal.The experimental results further prove that during the growth of 3C-SiC crystal from the silicon melt, the formation of 6 H-Si C can be suppressed by adjusting the process parameters properly.