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用ＡｒＦ准分子脉冲激光沉积法（ＰＬＤ）在石英玻璃衬底上制备均匀透明的ＳｒＢｉ２Ｔａ２Ｏ９铁电薄膜．紫外透射光谱研究表明在波长为３７０～９００ｎｍ范围薄膜具有很好的透光性，在３２０ｎｍ处有一陡峭的吸收边，由半导体理论计算得到薄膜的禁带宽度为３．２５ｅＶ，ＦＴＩＲ红外光谱研究表明薄膜晶格振动的特征频率约为２．４×１０１３Ｈｚ．
A uniformly transparent SrBi2Ta2O9 ferroelectric thin film was deposited on a quartz glass substrate by ArF excimer laser pulse deposition (PLD). The results of UV transmission spectroscopy show that the films have good transparency in the wavelength range of 370-900 nm, a steep absorption edge at 320 nm and the band gap of 3.25 eV calculated by semiconductor theory. The FTIR study shows The characteristic frequency of the film lattice vibration is about 2.4 × 10 13 Hz.