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使用等离子体增强化学气相沉积系统,在射频和直流负偏压的双重激励下制备了本征和掺杂后的氢化硅薄膜.利用拉曼谱对薄膜进行了微结构分析,用纳米压痕系统研究了薄膜的介观力学行为.研究表明:制备于玻璃衬底上的氢化硅薄膜,由于存在非晶态的过渡缓冲层,弹性模量小于相应的制备于单晶硅衬底的薄膜.对于掺杂的氢化硅薄膜,由于磷的掺入使得薄膜晶粒细化、有序度提高,薄膜的晶态比一般在40%以上.而硼的掺入,薄膜晶态比减小,一般低于40%.同时发现,掺磷、本征和掺硼的氢化硅薄膜分别在晶态比为45%,30%和15%左右处,弹性模量较小,对此给出了理论解释.
The plasma-enhanced chemical vapor deposition system was used to fabricate intrinsic and doped silicon hydride films under the double excitation of RF and DC negative bias.The microstructure of the films was analyzed by Raman spectroscopy, The mesomechanical behaviors of the films were investigated.The results show that the silicon hydride films prepared on glass substrates have a lower modulus of elasticity than that of the films prepared on monocrystalline silicon substrates due to the presence of amorphous transition buffer layer Doped silicon hydride films, due to the incorporation of phosphorus makes the film grain refinement, degree of order, the crystalline ratio of the film is generally above 40%, while the incorporation of boron, thin film crystalline ratio decreases, generally low At 40%, it is also found that the phosphorus-doped, intrinsic and boron-doped silicon hydride films have a small elastic modulus at crystalline states of 45%, 30% and 15%, respectively.