由于ＧａＮ薄膜在光电子学方面具有潜在的巨大应用前景，目前国际上对其进行了广泛的研究，但这些应用的实现有赖于生长出高质量的ＧａＮ单晶薄膜，以便有目的地掺杂ｎ－型和ｐ－型。迄今为止，ＧａＮ生长的极大部分工作为异质外延于蓝宝石（α－Ａｌ２Ｏ３）衬底上，而将... Due to their potential applications in optoelectronics, GaN films have been widely studied internationally. However, these applications rely on the growth of high quality GaN single crystal films for the purpose of purposely doping n- Type and p-type. To date, the vast majority of GaN growth work heteroepitaxially on sapphire (a-Al2O3) substrates, while ...