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报道了 SOI材料薄膜厚度的非破坏性快速测量方法 ,详细地研究了 SIMOX材料的红外吸收光谱特性 ,求出了特征峰对应的吸收系数 .提出利用红外吸收光谱测量 SIMOX绝缘埋层厚度的非破坏性方法 ,并根据离子注入原理计算出表面硅层的厚度 .SIMOX薄膜的表层硅和绝缘埋层的厚度是 SOI电路设计时最重要的两个参数 ,提供的非破坏性测量方法 ,测量误差小于5% .在 SIMOX材料开发利用、批量生产中 ,用此方法可及时方便地检测 SIMOX薄膜的表层硅和绝缘埋层的厚度 ,随时调整注入能量和剂量
The non-destructive rapid measurement method for the thickness of SOI material film is reported, the infrared absorption spectrum characteristics of SIMOX material are studied in detail, and the absorption coefficient corresponding to the characteristic peak is obtained.The infrared absorption spectroscopy is used to measure the non-destructiveness of SIMOX insulating buried layer thickness And the thickness of the surface silicon layer is calculated according to the ion implantation principle.The thickness of the surface silicon layer and the insulating buried layer of the SIMOX film is the most important two parameters in designing the SOI circuit and provides a nondestructive measurement method with a measurement error of less than 5% SIMOX materials in the development and utilization, mass production, with this method can be timely and easy SIMOX thin film surface layer of silicon and insulation buried thickness, at any time to adjust the injection of energy and dose