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美国IBM公司沃森研究中心的Hodgson小组,利用激光退火工艺,在掺镓钇铁柘榴石薄膜中产生了磁泡。这种激光辐射产生的磁泡,其磁畴直径仅为3微米,比起其它方法产生的,要更小更稳定。激光退火,能用来修复半导体器件中离子注入所引起的晶格损伤。目前,各国正在研究用来制造磁泡器件。众所周知,磁泡是计算机中存储信息的器件。相对于现在使用中的半导体存储器来说,磁泡存储器具有低成本和不费功率的优点。
The Hodgson team at the IBM Watson Research Center in the United States used laser annealing to create a bubble in a gallium-doped yttrium iron garnet film. The bubble created by this laser radiation has a magnetic domain diameter of only 3 micrometers, which is smaller and more stable than the other methods. Laser annealing can be used to repair lattice damage caused by ion implantation in semiconductor devices. Currently, various countries are studying the manufacture of bubble devices. It is well-known that bubble is a device that stores information in a computer. Compared to the currently used semiconductor memory, the bubble memory has the advantages of low cost and no power consumption.