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采用分子束外延方法在 Si(111)衬底上生长了 Pb Se/ Ba F2 / Ca F2 薄膜 ,扫描电镜和 X-光衍射分析显示 ,通过生长 Ba F2 / Ca F2 缓冲层的方法 ,在 Si(111)衬底上外延的 Pb Se薄膜晶体质量高 ,Pb Se表面光亮 ,无开裂现象发生 ,X-光衍射峰峰宽窄 (15 3arcs) .外延生长的 Pb Se薄膜被应用于制作光电二极管 ,首次采用热蒸发金属铝膜在 Pb Se表面形成 Al- Pb Se肖特基结光电二极管 ,获得了比 Pb- Pb Se肖特基结更为稳定和理想的电流 -电压特性曲线
Pb Se / Ba F2 / Ca F2 thin films were grown on Si (111) substrates by molecular beam epitaxy. Scanning electron microscopy and X-ray diffraction analysis showed that the growth of Ba F2 / 111) epitaxial PbSe thin films on the substrate have high quality, bright PbSe surface and no cracking, and the peak width of X-ray diffraction is 15 3arcs. The epitaxial Pb Se thin film is used in the fabrication of photodiodes for the first time The Al-Pb Se Schottky junction photodiode is formed on the surface of Pb Se by using a thermal evaporation aluminum metal film, which results in a more stable and ideal current-voltage characteristic curve than the Pb-Pb Se Schottky junction