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建立了常关型SiC结型场效应晶体管(JFET)功率特性的数值模型,研究了不同的结构和材料参数对器件功率特性的影响。仿真结果显示,沟道层、漂移层等各层的厚度及掺杂浓度对器件的开态电阻和击穿电压都有明显的影响;采用电流增强层可以明显提高器件的功率特性。研究结果表明,对SiC JFET的结构参数进行优化,可以有效提高器件的优值(FOM)。
A numerical model of the power characteristics of a normally closed SiC junction field effect transistor (JFET) is established. The influence of different structure and material parameters on the power characteristics of the device is investigated. Simulation results show that the thickness and doping concentration of the channel layer, drift layer and other layers have a significant impact on the on-state resistance and breakdown voltage of the device; the current enhancement layer can significantly improve the power characteristics of the device. The results show that optimizing the structural parameters of the SiC JFET can effectively improve the FOM of the device.