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用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al_(0.22)Ga_(0.78)N/GaN异质结势垒层应变的高温特性,温度变化范围从室温到813K.结果表明,对未钝化的异质结,当测试温度高于523K时,Al_(0.22)Ga_(0.78)N势垒层开始出现应变弛豫;钝化后,在Al_(0.22)Ga_(0.78)N势垒层中会产生一个附加的平面拉伸应变,并随着温度的增加,势垒层中的平面拉伸应变会呈现出一个初始的增加,接着应变将减小,对100nm厚的Al_(0.22)Ga_(0.78)N势垒层,应变只是轻微地减小,但对于50nm厚的Al_(0.22)Ga_(0.78)N势垒层,则出现了严重的应变弛豫现象.
The high temperature characteristics of the Al_ (0.22) Ga_ (0.78) N / GaN heterojunction barrier layer before and after surface passivation were investigated by HRXRD, and the temperature ranged from room temperature to 813 K. The results showed that the Un-passivated heterojunction. When the test temperature is higher than 523K, strain relaxation begins to occur in the Al 0.22 Ga 0.78 N barrier layer. After passivation, Layer will produce an additional plane tensile strain, and as the temperature increases, the plane tensile strain in the barrier layer will exhibit an initial increase, followed by strain will be reduced, the 100nm thick Al 0.22 The strain of Ga_ (0.78) N barrier layer decreases only slightly, but serious strain relaxation phenomenon occurs in 50 nm thick Al_ (0.22) Ga_ (0.78) N barrier layer.