基于GaN/AlGaN和InGaAs/AlAsSb多量子阱次带间跃迁的超快全光开关

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半导体量子阱(QW)次带间跃迁(ISB-T)有超快弛豫时间、大跃迁偶极矩和跃迁波长可调谐性大等优点。在级联激光器、光电探测器和光学开关等光电器件中ISB-T应用很普遍。全光开关对于100Gbit/s或更高比特率的光学时分复用(OTDM)通信系统的研发很重要。ISB-T的应用极具吸引力 Inter-band transitions (ISB-T) in semiconductor quantum wells (QWs) have the advantages of ultra-fast relaxation times, large transition dipole moments and large tunable wavelength transitions. ISB-T applications are common in opto-electronic devices such as cascaded lasers, photodetectors and optical switches. All-optical switching is important for the development of Optical Time Division Multiplexed (OTDM) communication systems with 100 Gbit / s or higher bit rates. The application of ISB-T is very attractive
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